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Dmitry A. Kiselev

National University of Science and Technology “MISiS”, Russia, 119049, Moscow, Leninsky ave., 4
Cand. Sci. (Phys.-Math.), Head of the Physics of Oxide Ferroelectrics Laboratory, National Research Technological University “MISiS” (Russia, 119049, Moscow, Leninsky ave., 4)

Zung Vu Van

National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Master’s degree student of the Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Sergo S. Harutyunyan

National Polytechnic University of Armenia, Armenia, 0009, Yerevan, Teryan st., 105; “Synopsys Armenia” CJSC, Armenia, 0026, Yerevan, Arshakunyats ave., 41
PhD student of the Microelectronic Circuits and Systems Department, National Polytechnic University of Armenia (Armenia, 0009, Yerevan, Teryan st., 105), Design Engineer of Analog and Mixed Signal Circuit, Eng. II, “Synopsys Armenia” CJSC (Armenia, 0026, Yerevan, Arshakunyats ave., 41)

Vera P. Smirnova

National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Engineer of the Institute of Integrated Electronics, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Igor L. Shcherbov

Donetsk National Technical University (Russia, 283001, Donetsk People's Republic, Donetsk, Artem st., 58)
Vice-Rector for Social and Economic Affairs, Donetsk National Technical University (Russia, 283001, Donetsk People's Republic, Donetsk, Artem st., 58)
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